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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4
BTC4505N3
Features
* High breakdown voltage. (BVCEO =400V) * Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. * Complementary to BTA1759N3
Symbol
BTC4505N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 Unit V V V mA W C C
BTC4505N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V A nA A V V MHz pF
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VCE=300V, REB=4k VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
BTC4505N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV) 10000
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 3/4
Saturation Voltage vs Collector Current
Current Gain---HFE
100
VCE = 10V
1000
VCE(SAT) @ IC = 20IB
10
VCE = 5V VCE = 1V
100
VCE(SAT) @ IC = 10IB
1 1 10 100 Collector Current---IC(mA) 1000
10 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
1000 Power Dissipation---PD(mW) Saturation Voltage---(mV) 250 200 150 100 50 0 1 10 100 1000 0
Power Derating Curve
VBE(SAT) @ IC =10IB
100 Collector Current---IC(mA)
50
100
150
200
Ambient Temperature---TA()
BTC4505N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE 3D
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505N3
CYStek Product Specification

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